Impact of Irradiation Temperature, Doping and Proton Energy on InGaAs Photodiodes-Reference-Cited by-同舟云学术

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Impact of Irradiation Temperature, Doping and Proton Energy on InGaAs Photodiodes

Published:2023 Issue: Volume: Page:1-1
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Benfante M.¹^ORCID,Reverchon J.-L.²,Virmontois C.³,Demiguel S.⁴,Goiffon V.⁵^ORCID

Affiliation:

1. III-V Lab, ISAE-SUPAERO, CNES, Thales Alenia Space, France

2. III-V Lab, 1 Avenue Augustin Fresnel, Palaiseau, France

3. French Space Agency CNES, Toulouse Cedex 4, France

4. Thales Alenia Space, Cannes La Bocca, France

5. ISAE SUPAERO, Université de Toulouse, 10 avenue E. Belin, Toulouse, France

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx7/23/4689328/10355955.pdf?arnumber=10355955

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1. Radiation Tolerance of Low-Noise Photoreceivers for the LISA Space Mission;IEEE Transactions on Nuclear Science;2024-08

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