FinFET reliability study by forward gated-diode generation–recombination current-Reference-Cited by-同舟云学术

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FinFET reliability study by forward gated-diode generation–recombination current

Published:2008-05-08 Issue:7 Volume:23 Page:075008
ISSN:0268-1242
Container-title:Semiconductor Science and Technology
language:
Short-container-title:Semicond. Sci. Technol.

Author:

Ma Chenyue,Li Bo,Wei Yiqun,Zhang Lining,He Jin,Zhang Xing,Lin Xinnan,Chan Mansun

Publisher

IOP Publishing

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. FinFET-a self-aligned double-gate MOSFET scalable to 20 nm

2. FinFET and MOSFET preliminary comparison of gate oxide reliability

3. Multiple-gate SOI MOSFETs

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Experimental Evaluation of Circuit-Based Modeling of the NBTI Effects in Double-Gate FinFETs;Microelectronics Reliability;2016-04

2. Gated Diode Investigation of Bias Temperature Instability in High- $\kappa$ FinFETs;IEEE Electron Device Letters;2010-07

3. Clear correspondence between gated-diode R–G current and performance degradation of SOI n-MOSFETs after F–N stress tests;Journal of Semiconductors;2009-12

4. A unified FinFET reliability model including high K gate stack dynamic threshold voltage, hot carrier injection, and negative bias temperature instability;2009 10th International Symposium on Quality of Electronic Design;2009-03

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