Impact of oxygen related extended defects on silicon diode characteristics
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.359209
Reference18 articles.
1. Oxygen precipitation effects on Sin+‐pjunction leakage behavior
2. Impact of silicon substrates on leakage currents
3. Deep Levels Associated with Oxygen Precipitation in CZ Silicon and Correlation with Minority Carrier Lifetimes
4. Oxygen Precipitation and MOS Leakage after a Process Heat Simulation
5. Investigation on Defects in Czochralski Silicon with High-Sensitive Laser/Microwave Photoconductance Technique
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