Well-behaved Ge n+/p shallow junction achieved by plasma immersion ion implantation
Author:
Funder
Ministry of Science and Technology, Taiwan
MOST
TSRI/NARL
Publisher
Elsevier BV
Subject
Surfaces, Coatings and Films,Condensed Matter Physics,Instrumentation
Reference23 articles.
1. Ion beam assisted coating and surface modification with plasma source ion implantation;Conrad;J. Vac. Sci. Technol. A,1990
2. Plasma immersion ion implantation semiconductor processing;Chu;Mater. Sci. Eng.: Rep.,1996
3. Plasma-based ion implantation and deposition: a review of physics, technology, and applications;Pelletier;IEEE Trans. Plasma Sci.,2005
4. Plasma immersion ion implantation (PIII) process-physics and technology;Gupta;Int. J. Adv. Technol.,2011
5. Sub-100 nm p+/n junction formation using plasma immersion ion implantation;Qian;Nucl. Instrum. Methods Phys. Res. B,1991
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