Analysis of the Effect of Cusp‐Shaped Magnetic Fields on Heat, Mass, and Oxygen Transfer Using a Coupled 2D/3D Global Model
Author:
Affiliation:
1. Research Institute for Applied Mechanics Kyushu University 6‐1 Kasuga‐koen Kasuga Fukuoka 816 8580 Japan
Publisher
Wiley
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1002/crat.202100092
Reference31 articles.
1. Effect of oxygen on dislocation movement in silicon
2. Intrinsic gettering by oxide precipitate induced dislocations in Czochralski Si
3. Oxygen precipitation effects on Sin+‐pjunction leakage behavior
4. Impact of oxygen related extended defects on silicon diode characteristics
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Three-Dimensional Simulation of Melt Convection and Oxygen Transport in CZ-Si Crystal Growth with Cusp Magnetic Fields;Crystals;2023-09-27
2. Investigation of Oxygen Behavior under Different Melt Flow, Diffusion Boundary Layer, and Crystal-Melt Interface in a 300 mm Silicon Crystal Growth with Cusp Magnetic Field;Coatings;2023-09-18
3. Three-dimensional modelling of 300 mm Czochralski silicon crystal growth with a transverse magnetic field;CrystEngComm;2023
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