Coupling mechanism of interface-induced generation-recombination current with the floating source in nMOSFET
Author:
Affiliation:
1. School of Electronic Engineering, Xi'an University of Posts and Telecommunications, Xi'an 710121, China
Funder
Science Foundation of Shaanxi Provincial department of education
National Natural Science Foundation of China (NSFC)
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4967165
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1. Interface trap-induced negative differential resistance in nMOSFET with floating source;Physics Letters A;2020-06
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3. Manipulation of Interface Trap-Induced Generation Current by Substrate Bias in MOSFET;IEEE Electron Device Letters;2018-08
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