Energy dependence of transient enhanced diffusion and defect kinetics
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126894
Reference6 articles.
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1. Efficient TCAD Model for the Evolution of Interstitial Clusters, {311} Defects, and Dislocation Loops in Silicon;MRS Proceedings;2007
2. Accurate and efficient TCAD model for the formation and dissolution of small interstitial clusters and {311} defects in silicon;Materials Science and Engineering: B;2005-12
3. Modeling extended defect ({311} and dislocation) nucleation and evolution in silicon;Journal of Applied Physics;2004-03
4. {311} defect evolution in ion-implanted, relaxed Si[sub 1−x]Ge[sub x];Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2004
5. Atomistic analysis of defect evolution and transient enhanced diffusion in silicon;Journal of Applied Physics;2003-07-15
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