Interstitial defects in silicon from 1–5 keV Si+ ion implantation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.119161
Reference13 articles.
1. Transient enhanced diffusion during rapid thermal annealing of boron implanted silicon
2. Implantation damage and the anomalous transient diffusion of ion‐implanted boron
3. Retarded and enhanced dopant diffusion in silicon related to implantation‐induced excess vacancies and interstitials
4. Anomalous transient diffusion of ion implanted dopants: A phenomenological model
5. The role of the surface in transient enhanced diffusion
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