Implantation damage and the anomalous transient diffusion of ion‐implanted boron
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98375
Reference12 articles.
1. Influence of annealing on the concentration profiles of boron implantations in silicon
2. Rapid thermal annealing of boron‐implanted silicon using an ultrahigh power arc lamp
3. Rapid thermal annealing of boron‐implanted silicon using an ultrahigh power arc lamp
4. Enhanced Diffusion in Boron Implanted Silicon
5. Modeling Rapid Thermal Diffusion of Arsenic and Boron in Silicon
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