Influence of annealing on the concentration profiles of boron implantations in silicon-Reference-Cited by-同舟云学术

Influence of annealing on the concentration profiles of boron implantations in silicon

Published:1973-11 Issue:5 Volume:2 Page:265-278
ISSN:0340-3793
Container-title:Applied physics
language:en
Short-container-title:Appl. Phys.

Author:

Hofker W. K.,Werner H. W.,Oosthoek D. P.,de Grefte H. A. M.

Publisher

Springer Science and Business Media LLC

Subject

General Materials Science,General Chemistry,General Engineering

Link

http://link.springer.com/content/pdf/10.1007/BF00889509.pdf

Reference22 articles.

1. S. Wagner: J. Electrochem. Soc., Solid State Sci. Technol.119, 1570 (1972)

2. K. Wittmaack, J. Maul, F. Schulz: Paper presented at the International Conference on Ion Implantation in Semiconductors and other Materials Yorktown Heights, N. Y., December 11–14, 1972

3. W. K. Hofker, H. W. Werner, D. P. Oosthoek, H. A. M. de Grefte: In: Proceedings of the International Conference on Ion Implantation in Semiconductors and Other Materials, York-town Heights, N. Y., December 11–14, 1972

4. R. W. Bicknell, R. M. Allen: Rad. Effects6, 45 (1970)

5. L. T. Chadderton, F. H. Eisen: Rad. Effects7, 129 (1971)

Cited by 104 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evaporation behavior of SiO 2 glass doped with various transition metal oxides;Journal of the American Ceramic Society;2021-03

2. Semiconductor Applications;Flash Lamp Annealing;2019

3. Structural Properties of Silicon Implanted with Unfiltered Boron Plasma Ions;Journal of Nanoelectronics and Optoelectronics;2018-12-12

4. Diffusion and retention of helium in titanium carbide;Journal of Nuclear Materials;2014-05

5. Modeling of defects, dopant diffusion and clustering in silicon;Journal of Computational Electronics;2013-10-23