Correlation of electron microscope studies with the electrical properties of boron implanted silicon
Author:
Publisher
Informa UK Limited
Subject
General Engineering
Link
http://www.tandfonline.com/doi/pdf/10.1080/00337577008235044
Reference16 articles.
1. The measurement of electrical activity and Hall mobility of boron and phosphorus ion-implanted layers in silicon†
2. The distribution of condensed defect structures formed in annealed boron-implanted silicon
3. Oxidation, defects and vacancy diffusion in silicon
4. Annealing of γ-ray irradiated N-type germanium
5. Isochronal annealing ofpandn-type silicon irradiated at 80°K
Cited by 42 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Thermal Activation in Ion-shower-doped Poly-Si;Journal of the Korean Physical Society;2011-02-15
2. Reverse annealing of boron doped polycrystalline silicon;Thin Solid Films;2008-07
3. Medium energy ion scattering for the characterisation of damage profiles of ultra shallow B implants in Si;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-07
4. Harnessing reverse annealing phenomenon for shallow p-n junction formation;Journal of Applied Physics;1997-11-15
5. Metallic Impurity Gettering and Secondary Defect Formation in Megaelectron Volt Self‐Implanted Czochralski and Float‐Zone Silicon;Journal of The Electrochemical Society;1997-08-01
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3