Reverse annealing of boron doped polycrystalline silicon-Reference-Cited by-同舟云学术

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Reverse annealing of boron doped polycrystalline silicon

Published:2008-07 Issue:18 Volume:516 Page:6321-6324
ISSN:0040-6090
Container-title:Thin Solid Films
language:en
Short-container-title:Thin Solid Films

Author:

Jin Beop-Jong,Hong Won-Eui,Kim Deok Hoi,Uemoto Tstomu,Kim Chi Woo,Ro Jae-Sang

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,Surfaces and Interfaces,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. Phosphorus doping for hydrogenated amorphous silicon films by a low‐energy ion doping technique

2. Large‐Area Ion Doping Technique with Bucket‐Type Ion Source for Polycrystalline Silicon Films

3. Non‐mass‐separated ion shower doping of polycrystalline silicon

4. First Int. Conf on Ion Implantation;Siedel,1971

5. Correlation of electron microscope studies with the electrical properties of boron implanted silicon

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Comparative Study on the Activation Behavior of Implanted Boron and Phosphorus for LTPS Using Solid-Phase Crystallization;MRS Proceedings;2012

2. Electrical activation in boron doped polycrystalline Si formed by sequential lateral solidification;Thin Solid Films;2011-10

3. Boron induced recrystallization of amorphous silicon film by a rapid thermal process;Thin Solid Films;2010-10

4. Dopant activation in ion implanted silicon by microwave annealing;Journal of Applied Physics;2009-12

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