Medium energy ion scattering for the characterisation of damage profiles of ultra shallow B implants in Si-Reference-Cited by-同舟云学术

Medium energy ion scattering for the characterisation of damage profiles of ultra shallow B implants in Si

Published:2001-07 Issue:1-2 Volume:183 Page:154-165
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

van den Berg J.A,Zhang S,Whelan S,Armour D.G,Goldberg R.D,Bailey P,Noakes T.C.Q

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference38 articles.

1. International Technology Roadmap for Semiconductors, Semiconductor Industry Association, 1999

2. A. Agarwal, in: Proceedings of the XIIIth International Conference on Ion Implantation Technology (IIT 2000), Alpbach, September 2000, to be published

3. Ion beam crystallography of surfaces and interfaces

4. R.M. Tromp, in: D. Briggs, M.P. Seah (Eds.), Ion and Neutral Spectroscopy, Vol. 2, Wiley, New York, 1992, p. 577

5. Ion beam deposition and in-situ ion beam analysis

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evaluation of the chemical states and electrical activation of ultra-highly B-doped Si1-xGex by ion implantation and subsequent nanosecond laser annealing;Applied Surface Science;2024-06

2. Improved physical models for advanced silicon device processing;Materials Science in Semiconductor Processing;2017-05

3. Effect of an increase in the density of collision cascades on the efficiency of the generation of primary displacements during the ion bombardment of Si;Semiconductors;2016-08

4. Shape, size, and atomic composition analysis of nanostructures in 3D by Rutherford backscattering spectrometry;Applied Surface Science;2013-09

5. Medium energy ion scattering for the high depth resolution characterisation of high-k dielectric layers of nanometer thickness;Applied Surface Science;2013-09