Evaluation of the chemical states and electrical activation of ultra-highly B-doped Si1-xGex by ion implantation and subsequent nanosecond laser annealing

Author:

Lee KiseokORCID,Jo ChungheeORCID,Yoon DongminORCID,Baik SeunghyunORCID,Ko Dae-HongORCID

Funder

Korea Ministry of Trade Industry and Energy

Publisher

Elsevier BV

Reference65 articles.

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5. Dopant activation of in situ phosphorus-doped silicon using multi-pulse nanosecond laser annealing;Shin;Phys. Status Solidi Appl. Mater. Sci.,2020

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