Improved physical models for advanced silicon device processing-Reference-Cited by-同舟云学术

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Improved physical models for advanced silicon device processing

Published:2017-05 Issue: Volume:62 Page:62-79
ISSN:1369-8001
Container-title:Materials Science in Semiconductor Processing
language:en
Short-container-title:Materials Science in Semiconductor Processing

Author:

Pelaz Lourdes,Marqués Luis A.,Aboy María,López Pedro,Santos Iván

Funder

EU (FEDER)

Spanish Ministerio de Ciencia e Innovación

Junta de Castilla y León

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference186 articles.

1. Considerations for Ultimate CMOS Scaling

2. High Performance Silicon Nanowire Field Effect Transistors

3. Fabrication of silicon nanowires

4. Ion beam doping of semiconductor nanowires

5. See 〈http://www.itrs.net/〉 for International Technology Roadmap for Semiconductors.

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1. Surface Recrystallization Model of Fully Amorphized C3H5-Molecular-Ion-Implanted Silicon Substrate;Crystals;2024-08-23

2. Efficient and stable activation by microwave annealing of nanosheet silicon doped with phosphorus above its solubility limit;Applied Physics Letters;2022-08-01

3. Ion‐Implantation in Titania‐Based Plasmonic Photo‐anodes: A Review;Advanced Materials Interfaces;2022-07-19

4. SIMULATION OF BORON DIFFUSION IN THE NEAR-SURFACE REGION OF SILICON SUBSTRATE;Surface Review and Letters;2020-08-18

5. Lattice location study of low-fluence ion-implanted 124In in 3C-SiC;Journal of Applied Physics;2019-06-07

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