Modeling extended defect ({311} and dislocation) nucleation and evolution in silicon-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Modeling extended defect ({311} and dislocation) nucleation and evolution in silicon

Published:2004-03 Issue:5 Volume:95 Page:2452-2460
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Avci Ibrahim,Law Mark E.,Kuryliw Erik,Saavedra Antonio F.,Jones Kevin S.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1645644

Reference19 articles.

1. A systematic analysis of defects in ion-implanted silicon

2. Defects Induced by Deep Preamorphization and Their Effects on Metal Oxide Semiconductor Device Characteristics

3. Experimental investigation and modeling of the role of extended defects during thermal oxidation

4. Evolution of dislocation loops in silicon in an inert ambient—I

5. Coarsening of End-of-Range defects in ion-implanted silicon annealed in neutral and oxidizing ambients

Cited by 16 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Laser-matter interactions;Laser Annealing Processes in Semiconductor Technology;2021

2. Atomistic modeling of laser-related phenomena;Laser Annealing Processes in Semiconductor Technology;2021

3. {001} loops in silicon unraveled;Acta Materialia;2019-03

4. Kinetic Monte Carlo simulation for semiconductor processing: A review;Progress in Materials Science;2018-03

5. Ultrafast Generation of Unconventional{001}Loops in Si;Physical Review Letters;2017-11-17

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP