Transient diffusion of low‐concentration B in Si due to29Si implantation damage
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103100
Reference15 articles.
1. Rapid thermal annealing of boron‐implanted silicon using an ultrahigh power arc lamp
2. Transient enhanced diffusion during rapid thermal annealing of boron implanted silicon
3. Some aspects of damage annealing in ion‐implanted silicon: Discussion in terms of dopant anomalous diffusion
4. Retarded and enhanced dopant diffusion in silicon related to implantation‐induced excess vacancies and interstitials
5. Rapid annealing and the anomalous diffusion of ion implanted boron into silicon
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