A crystalline oxide passivation for Al2O3/AlGaN/GaN
Author:
Affiliation:
1. Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, Texas 75080, USA
Funder
MOTIE/KETI Korea
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4897641
Reference35 articles.
1. AlGaN/GaN HEMTs-an overview of device operation and applications
2. Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs
3. AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates
4. Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors
5. Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems
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