Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems-Reference-Cited by-同舟云学术

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Interfacial oxide re-growth in thin film metal oxide III-V semiconductor systems

Published:2012-04-02 Issue:14 Volume:100 Page:141606
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

McDonnell S.,Dong H.,Hawkins J. M.,Brennan B.,Milojevic M.,Aguirre-Tostado F. S.,Zhernokletov D. M.,Hinkle C. L.,Kim J.,Wallace R. M.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3700863

Reference40 articles.

1. Nanometre-scale electronics with III–V compound semiconductors

2. GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

3. HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition

4. Surface passivation of III-V compound semiconductors using atomic-layer-deposition-grown Al2O3

5. Interfacial self-cleaning in atomic layer deposition of HfO2 gate dielectric on In0.15Ga0.85As

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