Quality assessment of GaN epitaxial films: Acidification scenarios based on XPS-and-DFT combined study-Reference-Cited by-同舟云学术

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Quality assessment of GaN epitaxial films: Acidification scenarios based on XPS-and-DFT combined study

Published:2021-10 Issue: Volume:563 Page:150308
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Zatsepin D.A.,Boukhvalov D.W.,Zatsepin A.F.

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference41 articles.

1. B. Gil, Group III Nitride Semiconductor Compounds: Physics and Applications, Ed.: Clarendon Press, NY, USA, ISBN: 0198501595 (1998) 470 p.

2. GaN power switches on the rise: demonstrated benefits and unrealized potentials;Chu;Appl. Phys. Lett.,2020

3. GaN-based RF power devices and amplifiers;Mishra;Proc. IEEE,2008

4. 1200-V Normally off GaN-on-Si field-effect transistors with low dynamic on-resistance;Chu;IEEE Electron Device Lett.,2011

5. Trench formation and corner rounding in vertical GaN power devices;Zhang;Appl. Phys. Lett.,2017

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3. Facile fabrication of 3D honeycomb-like porous GaN photoanode for reliable and sensitive photoelectrochemical detection of glucose;Journal of Alloys and Compounds;2023-04

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