GaN power switches on the rise: Demonstrated benefits and unrealized potentials
Author:
Affiliation:
1. Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania, 16802, USA
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5133718
Reference54 articles.
1. GaN-on-Si Power Technology: Devices and Applications
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3. High Breakdown Voltage Achieved on AlGaN/GaN HEMTs With Integrated Slant Field Plates
4. The 1.6-kV AlGaN/GaN HFETs
5. The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs
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