0.58 mΩ⋅cm²/523 V GaN Vertical Schottky Barrier Diode With 15.6 kA/cm² Surge Current Enabled by Laser Lift-Off/ Annealing and N-Ion Implantation-Reference-Cited by-同舟云学术

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0.58 mΩ⋅cm²/523 V GaN Vertical Schottky Barrier Diode With 15.6 kA/cm² Surge Current Enabled by Laser Lift-Off/ Annealing and N-Ion Implantation

Published:2024-06 Issue:6 Volume:45 Page:964-967
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Qi Wei¹,Zhou Feng¹^ORCID,Ma Teng²^ORCID,Xu Weizong¹^ORCID,Zhou Dong¹^ORCID,Ren Fangfang¹^ORCID,Chen Dunjun¹^ORCID,Zhang Rong¹^ORCID,Zheng Youdou¹,Lu Hai¹^ORCID

Affiliation:

1. School of Electronic Science and Engineering, Nanjing University, Nanjing, China

2. Science and Technology on Reliability Physics and Application of Electronic Component Laboratory, China Electronic Product Reliability and Environmental Testing Research Institute, Guangzhou, China

Funder

National Key Research and Development Program of China

Jiangsu Provincial Key Research and Development Program

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/55/10538033/10504258.pdf?arnumber=10504258

Reference39 articles.

1. GaN-on-Si Power Technology: Devices and Applications

2. GaN power switches on the rise: Demonstrated benefits and unrealized potentials

3. Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part II

4. Design and Realization of GaN Trench Junction-Barrier-Schottky-Diodes

5. Fast-Switching Tri-Anode Schottky Barrier Diodes for Monolithically Integrated GaN-on-Si Power Circuits

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