Evaluation and modeling of lanthanum diffusion in TiN/La2O3/HfSiON/SiO2/Si high-k stacks
Author:
Funder
European Union
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4764558
Reference16 articles.
1. High-κ gate dielectrics: Current status and materials properties considerations
2. Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability
3. Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning
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