Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2150586
Reference11 articles.
1. Interface structure and non-stoichiometry in HfO2 dielectrics
2. Subnanometer Scaling of HfO[sub 2]/Metal Electrode Gate Stacks
3. Charge trapping and detrapping in HfO2 high-κ gate stacks
4. High-<tex>$kappa$</tex>/Metal–Gate Stack and Its MOSFET Characteristics
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