Study of the La-related dipole in TiN/LaOx/HfSiON/SiON/Si gate stacks using hard X-ray photoelectron spectroscopy and backside medium energy ion scattering-Reference-Cited by-同舟云学术

Study of the La-related dipole in TiN/LaOx/HfSiON/SiON/Si gate stacks using hard X-ray photoelectron spectroscopy and backside medium energy ion scattering

Published:2015-04 Issue: Volume:335 Page:71-77
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Boujamaa R.,Martinez E.,Pierre F.^ORCID,Renault O.,Detlefs B.,Zegenhagen J.,Baudot S.,Gros-Jean M.,Bertin F.,Dubourdieu C.

Funder

European EUREKA/CATRENE

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

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