New directions in the analysis of buried interfaces for device technology by hard X-ray photoemission-Reference-Cited by-同舟云学术

New directions in the analysis of buried interfaces for device technology by hard X-ray photoemission

Published:2022 Issue: Volume:236 Page:288-310
ISSN:1359-6640
Container-title:Faraday Discussions
language:en
Short-container-title:Faraday Discuss.

Author:

Renault O.¹^ORCID,Deleuze P.-M.¹^ORCID,Courtin J.¹,Bure T. R.¹^ORCID,Gauthier N.¹^ORCID,Nolot E.¹,Robert-Goumet C.²^ORCID,Pauly N.³^ORCID,Martinez E.¹^ORCID,Artyushkova K.⁴^ORCID

Affiliation:

1. Univ. Grenoble-Alpes, CEA, Leti, 38000 Grenoble, France

2. Université Clermont Auvergne, Clermont Auvergne INP, CNRS, Institut Pascal, F-63000 Clermont-Ferrand, France

3. Université Libre de Bruxelles, Service de Métrologie Nucléaire (CP 165/84), 50 av. F. D. Roosevelt, B-1050 Brussels, Belgium

4. Physical Electronics Inc., 18725 Lake Drive E, Chanhassen, MN 55317, USA

Abstract

In this review, the status of hard X-ray photoelectron spectroscopy (HAXPES) implemented with chromium Kα excitation (5.414 keV) and applied to technological research in nanoelectronics is presented.

Funder

Agence Nationale de la Recherche

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/FD/D1FD00110H

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