Direct evidence of flat band voltage shift for TiN/LaO or ZrO/SiO2 stack structure via work function depth profiling-Reference-Cited by-同舟云学术

Direct evidence of flat band voltage shift for TiN/LaO or ZrO/SiO2 stack structure via work function depth profiling

Published:2017-03-02 Issue:1 Volume:7 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Heo Sung,Park Hyoungsun,Ko Dong-Su,Kim Yong Su,Kyoung Yong Koo,Lee Hyung-Ik,Cho Eunae,Lee Hyo Sug,Park Gyung-Su,Shin Jai Kwang,Lee Dongjin,Lee Jieun,Jung Kyoungho,Jeong Moonyoung,Yamada Satoru,Kang Hee Jae,Choi Byoung-Deog

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep43561.pdf

Reference19 articles.

1. Colinge, J. P. FinFETs and other multi-gate transistors. Springer (2008).

2. Leroux, C. et al. Investigating doping effects on high-kappa metal gate stack for effective work function engineering. Solid State Electronics 88, 21–26 (2013).

3. Kadoshima, M. et al. Effective-Work-Function Control by Varying the TiN Thickness in Poly-Si/TiN Gate Electrodes for Scaled High- k CMOSFETs. IEEE Electron Device Letters 30, 466 (2009).

4. Freeouf, J. L. & Woodall, J. M. Schottky barriers: An effective work function model. Appl. Phys. Lett. 39, 727 (1981).

5. Essa, Z. et al. Evaluation and modeling of lanthanum diffusion in TiN/La2O3/HfSiON/SiO2/Si high-k stacks. Appl. Phys. Lett. 101, 182901 (2012).

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