A Metal Dual Work-Function Gate (MDWG) for the Continuous Scaling of DRAM Cell Transistors-Reference-Cited by-同舟云学术

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A Metal Dual Work-Function Gate (MDWG) for the Continuous Scaling of DRAM Cell Transistors

Published:2024-06-16 Issue: Volume: Page:1-2
ISSN:
Container-title:2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
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Author:

Kim Junsoo¹,Lee Hyun Jung¹,Jang Sung Ho¹,Lee Jun Bum¹,Kim Il Gweon¹,Oh Jeonghoon¹,Park Jemin¹,Song Jaihyuk²

Affiliation:

1. DRAM TD

2. Device Solutions CTO

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx8/10631290/10631310/10631370.pdf?arnumber=10631370

Reference4 articles.

1. Direct evidence of flat band voltage shift for TiN/LaO or ZrO/SiO2 stack structure via work function depth profiling

2. VLSI 85: VLSI design of digital systems

3. SSE

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