Probing and Manipulating the Interfacial Defects of InGaAs Dual-Layer Metal Oxides at the Atomic Scale-Reference-Cited by-同舟云学术

Probing and Manipulating the Interfacial Defects of InGaAs Dual-Layer Metal Oxides at the Atomic Scale

Published:2017-11-27 Issue:2 Volume:30 Page:1703025
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Wu Xing¹²^ORCID,Luo Chen¹,Hao Peng³,Sun Tao³,Wang Runsheng³,Wang Chaolun¹,Hu Zhigao¹,Li Yawei¹,Zhang Jian¹,Bersuker Gennadi⁴,Sun Litao²,Pey Kinleong⁵

Affiliation:

1. Shanghai Key Laboratory of Multidimensional Information Processing; Department of Electrical Engineering; East China Normal University; 500, Dongchuan Road Shanghai 200241 China

2. SEU-FEI Nano-Pico Center; Key Laboratory of MEMS of Ministry of Education; School of Electronic Science and Engineering; Southeast University; Nanjing 210096 P. R. China

3. Institute of Microelectronics; School of Electronics Engineering and Computer Science; Peking University; 5, Yiheyuan Road, Haidian District Beijing 100871 China

4. The Aerospace Corporation; P.O. Box 92957, M2/244 Los Angeles CA 90009 USA

5. Singapore University of Technology and Design; 8 Somapah Road 487372 Singapore

Funder

National Natural Science Foundation of China

Science and Technology Commission of Shanghai Municipality

Shanghai Rising-Star Program

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Reference41 articles.

1. Moore's Law Forever?