Arsenic decapping and half cycle reactions during atomic layer deposition of Al2O3 on In0.53Ga0.47As(001)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3452336
Reference13 articles.
1. Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors
2. Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning
3. Half-cycle atomic layer deposition reaction studies of Al2O3 on In0.2Ga0.8As (100) surfaces
4. Model of interface states at III-V oxide interfaces
5. Atomically abrupt and unpinned Al2O3/In0.53Ga0.47As interfaces: Experiment and simulation
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3. Engineering of AlON interlayer in Al 2 O 3 /AlON/In 0.53 Ga 0.47 As gate stacks by thermal atomic layer deposition;Current Applied Physics;2018-08
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