High performance In0.83Ga0.17As SWIR photodiode passivated by Al2O3/SiNx stacks with low-stress SiNx films-Reference-Cited by-同舟云学术

High performance In0.83Ga0.17As SWIR photodiode passivated by Al2O3/SiNx stacks with low-stress SiNx films

Published:2019-07-21 Issue:3 Volume:126 Page:033101
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Wan Luhong¹²³,Cao Gaoqi⁴,Shao Xiumei¹²,Deng Shuangyan¹²,Cheng Jifeng¹²,Gu Yi¹²,Li Xue¹²^ORCID

Affiliation:

1. State Key Laboratories of Transducer Technology, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

2. Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

3. University of Chinese Academy of Sciences, Beijing 100049, China

4. Fudan University, Shanghai 200433, China

Funder

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5090393

Reference32 articles.

1. 2D SWIR image sensor with extended wavelength cutoff of 2.5 μm on InP/InGaAs epitaxial wafers with graded buffer layers

2. Passive shortwave infrared broadband and hyperspectral imaging in a maritime environment

3. Low dark current InGaAs detector arrays for night vision and astronomy

4. The development of InGaAs short wavelength infrared focal plane arrays with high performance

5. Modeling of frequency-dependent negative differential capacitance in InGaAs/InP photodiode

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