2D SWIR image sensor with extended wavelength cutoff of 2.5 μm on InP/InGaAs epitaxial wafers with graded buffer layers

Author:

Mushini Prabhu,Huang Wei,Morales Manuel,Brubaker Robert,Nguyen Thuc-Uyen,Dobies Matt,Zhang Wei,Gustus William,Mathews Gary,Endicter Scott,Paik Namwoong

Publisher

SPIE

Reference5 articles.

1. Mid-wavelength infrared p-on-n Hg1−xCdxTe heterostructure detectors: 30–120 kelvin state-of-the-Art performance

2. Yonggang Zhang, Yi Gu, Zhaobing Tian, Aizhen Li, Ziangrong Zhu, Yanlan Zheng “ Wavelength extended 2.4um heterojunction InGaAs photodiodes with InAlAs cap and linearly graded buffer layers suitable for both front and back illuminations.” Infrared Physics & Technology 51 (2008) 316–321.

3. SWIR/MWIR InP-Based p-i-n Photodiodes With InGaAs/GaAsSb Type-II Quantum Wells

4. Ethan J.D Klem, Chris Gregory, Dorota Temple, and Jay Lewis. “ PbS Colloidal Quantum Dot Photodiodes for Low- Cost SWIR sensing” Proc. Of SPIE Vol 9451 945104-1

5. 2.6 μm InGaAs photodiodes

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