Detection of Ga suboxides and their impact on III-V passivation and Fermi-level pinning
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3120546
Reference22 articles.
1. Oxide/III-V Compound Semiconductor Interfaces
2. Anomalous frequency dispersion of m.o.s. capacitors formed on n-type GaAs by anodic oxidation
3. Unpinned gallium oxide/GaAs interface by hydrogen and nitrogen surface plasma treatment
4. Quasistatic and high frequency capacitance–voltage characterization of Ga2O3–GaAs structures fabricated by in situ molecular beam epitaxy
5. ‘‘Pinning’’ and Fermi level movement at GaAs surfaces and interfaces
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