Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications-Reference-Cited by-同舟云学术

Passivation of InGaAs interface states by thin AlN interface layers for metal-insulator-semiconductor applications

Published:2017-01 Issue:1 Volume:35 Page:011205
ISSN:2166-2746
Container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
language:en
Short-container-title:Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena

Author:

Krylov Igor¹,Pokroy Boaz²,Ritter Dan³,Eizenberg Moshe²

Affiliation:

1. The Russell Berrie Nanotechnology Institute, Technion–Israel Institute of Technology, Haifa 32000, Israel; Department of Materials Science and Engineering, Technion–Israel Institute of Technology, Haifa 32000, Israel; and Department of Electrical Engineering, Technion–Israel Institute of Technology, Haifa 32000, Israel

2. The Russell Berrie Nanotechnology Institute, Technion–Israel Institute of Technology, Haifa 32000, Israel and Department of Materials Science and Engineering, Technion–Israel Institute of Technology, Haifa 32000, Israel

3. The Russell Berrie Nanotechnology Institute, Technion–Israel Institute of Technology, Haifa 32000, Israel and Department of Electrical Engineering, Technion–Israel Institute of Technology, Haifa 32000, Israel

Publisher

American Vacuum Society

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Process Chemistry and Technology,Instrumentation,Electronic, Optical and Magnetic Materials

Link

http://avs.scitation.org/doi/pdf/10.1116/1.4973300

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