Reconstruction of the SiO2structure damaged by low-energy Ar-implanted ions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.363998
Reference17 articles.
1. Novel characterization of implant damage in SiO2by nuclear‐deposited energy
2. Structural and electrical damage induced by high‐energy heavy ions in SiO2/Si structures
3. Radiation damage and the role of structure in amorphous SiO2
4. Etching rate modification in silicon oxide by ion implantation and rapid thermal annealing
5. N and Ar ion‐implantation effects in SiO2films on Si single‐crystal substrates
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1. Hyperdoping of germanium with argon toward strain-doping-induced indirect-to-direct bandgap transition in Ge;Applied Physics Letters;2024-07-29
2. Excimer laser annealing suppresses the bubbles in the recrystallization of argon-implantation induced amorphous germanium;Journal of Applied Physics;2023-01-27
3. Acoustical emission and fractoluminescence from the Ar+-implanted fused SiO2;Journal of Non-Crystalline Solids;2021-10
4. Production of low-energy fragment-ion beams from hexamethyldisiloxane and the irradiation of SiO+ ion beam to substrates with supplemental oxygen gas for SiO2 film formation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2020-09
5. Influence of topological constraints on ion damage resistance of amorphous hydrogenated silicon carbide;Acta Materialia;2019-02
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