Production of low-energy fragment-ion beams from hexamethyldisiloxane and the irradiation of SiO+ ion beam to substrates with supplemental oxygen gas for SiO2 film formation-Reference-Cited by-同舟云学术

Production of low-energy fragment-ion beams from hexamethyldisiloxane and the irradiation of SiO+ ion beam to substrates with supplemental oxygen gas for SiO2 film formation

Published:2020-09 Issue: Volume:479 Page:13-17
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Yoshimura Satoru,Sugimoto Satoshi,Takeuchi Takae^ORCID,Kiuchi Masato

Funder

Osaka University

JSPS

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference35 articles.

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2. Growth of carbon thin film by low-energy mass-selected ion beam deposition;Ohno;Nucl. Instrum. Meth. Phys. Res. B,1999

3. Growth of 3C-SiC(100) thin films on Si(100) by the molecular ion beam deposition;Matsumoto;Surf. Sci.,2001

4. Plasma-enhanced chemical vapor deposition of silicon dioxide deposited at low temperatures;Ceiler;J. Electrochem. Soc.,1995

5. Hybrid films formed from hexamethyldisiloxane and SiO by plasma process;Kashiwagi;Jpn. J. Apply. Phys.,1991

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1. Low-energy O+ or SiO+ ion beam induced deposition of silicon oxide using hexamethyldisiloxane;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2024-04

2. Low-energy O+ ion beam induced chemical vapor deposition using tetraethyl orthosilicate for silicon dioxide film formation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2022-01

3. Low-energy O+ ion beam induced chemical vapor deposition using hexamethyldisilane or hexamethyldisilazane for silicon dioxide film formation;AIP Advances;2021-12-01