Low-energy O+ ion beam induced chemical vapor deposition using hexamethyldisilane or hexamethyldisilazane for silicon dioxide film formation-Reference-Cited by-同舟云学术

Low-energy O+ ion beam induced chemical vapor deposition using hexamethyldisilane or hexamethyldisilazane for silicon dioxide film formation

Author:

Yoshimura Satoru¹^ORCID,Sugimoto Satoshi¹,Takeuchi Takae²^ORCID,Kiuchi Masato¹

Affiliation:

1. Center for Atomic and Molecular Technologies, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan

2. Department of Chemistry, Biology and Environmental Science, Faculty of Science, Nara Women’s University, Nara, Nara 630-8506, Japan

Funder

Japan Society for the Promotion of Science

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

Reference38 articles.

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

3. Deposition of germanium dioxide films by the injection of oxygen ion beam in conjunction with hexamethyldigermane;Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment;2023-11