Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels
Author:
Affiliation:
1. Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
2. Transphom Inc., Goleta, California 93117, USA
Funder
DOD | Defense Advanced Research Projects Agency
DOD | United States Navy | Office of Naval Research
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5010944
Reference21 articles.
1. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
2. Spontaneous polarization and piezoelectric constants of III-V nitrides
3. Recent progress in metal-organic chemical vapor deposition of $\left( 000\bar{1} \right)$ N-polar group-III nitrides
4. N-polar GaN epitaxy and high electron mobility transistors
5. Very Low Ohmic Contact Resistance through an AlGaN Etch-Stop in Nitrogen-Polar GaN-Based High Electron Mobility Transistors
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2. High Current and Linearity AlGaN/GaN/-Graded-AlGaN:Si-doped/GaN Heterostructure for Low Voltage Power Amplifier Application;IEEE Electron Device Letters;2023-04
3. High-density polarization-induced 2D electron gases in N-polar pseudomorphic undoped GaN/Al0.85Ga0.15N heterostructures on single-crystal AlN substrates;Applied Physics Letters;2022-08-22
4. Metalorganic chemical vapor deposition of InN quantum dots and nanostructures;Light: Science & Applications;2021-07-20
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