Record high electron mobility and low sheet resistance on scaled-channel N-polar GaN/AlN heterostructures grown on on-axis N-polar GaN substrates by plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

Record high electron mobility and low sheet resistance on scaled-channel N-polar GaN/AlN heterostructures grown on on-axis N-polar GaN substrates by plasma-assisted molecular beam epitaxy

Published:2020-07-27 Issue:4 Volume:117 Page:042102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Diez Sandra¹^ORCID,Mohanty Subhajit²^ORCID,Kurdak Cagliyan¹³^ORCID,Ahmadi Elaheh¹²^ORCID

Affiliation:

1. Applied Physics Program, University of Michigan, Ann Arbor, Michigan 48109, USA

2. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA

3. Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, USA

Funder

Office of Naval Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/5.0014460

Reference28 articles.

1. B. Romanczyk , S. Wienecke , M. Guidry , H. Li , K. Hestroffer , E. Ahmadi , X. Zheng , S. Keller , and U. K. Mishra , in 2016 74th Annual Device Research Conference ( IEEE, 2016), pp. 1–2.

2. A. Arias , P. Rowell , J. Bergman , M. Urteaga , K. Shinohara , X. Zheng , H. Li , B. Romanczyk , M. Guidry , S. Wienecke , E. Ahmadi , S. Keller , and U. Mishra , in 2017 IEEE Compound Semiconductor Integrated Circuits Symposium (CSICS) ( Institute of Electrical and Electronics Engineers, Inc. 2017), pp. 1–3.

3. Analysis of MOCVD SiNx Passivated N-Polar GaN MIS-HEMTs on Sapphire With High $f_{max}\cdot V_{DS,Q}$

4. W-Band Power Performance of SiN-Passivated N-Polar GaN Deep Recess HEMTs

5. N-Polar GaN HEMTs Exhibiting Record Breakdown Voltage Over 2000 V and Low Dynamic On-Resistance

Cited by 24 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Lattice Polarity Manipulation of AlN Films on SiC Substrates for N-Polar GaN HEMTs;Crystal Growth & Design;2024-08-27

2. Electrical Properties of N‐Polar GaN/AlGaN/AlN Grown via Metal‐Organic Vapor Phase Epitaxy;physica status solidi (a);2024-06-27

3. Effect of annealing on the electrical performance of N-polarity GaN Schottky barrier diodes;Journal of Semiconductors;2024-04-01

4. Polarity Control of High Crystalline Quality Aln Thin Films Grown on Si(111) Substrates by Molecular Beam Epitaxy;2024

5. Subcircuit Modeling of Dual Channel MOS-HEMTs Using Standard ASM-HEMT;IEEE Transactions on Electron Devices;2023-10