High Current and Linearity AlGaN/GaN/-Graded-AlGaN:Si-doped/GaN Heterostructure for Low Voltage Power Amplifier Application-Reference-Cited by-同舟云学术

High Current and Linearity AlGaN/GaN/-Graded-AlGaN:Si-doped/GaN Heterostructure for Low Voltage Power Amplifier Application

Published:2023-04 Issue:4 Volume:44 Page:582-585
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Yu Qian¹^ORCID,Shi Chunzhou¹^ORCID,Yang Ling¹^ORCID,Lu Hao¹^ORCID,Zhang Meng¹^ORCID,Wu Mei¹^ORCID,Hou Bin¹^ORCID,Jia Fuchun¹^ORCID,Guo Fei¹,Ma Xiaohua¹^ORCID,Hao Yue¹^ORCID

Affiliation:

1. State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China

Funder

National Natural Science Foundation of China

China National Postdoctoral Program for Innovative Talents

China Postdoctoral Science Foundation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10081123/10035950.pdf?arnumber=10035950

Reference34 articles.

1. Large-signal linearity in III-N MOSDHFETs

2. GaN-Based Multi-Channel Transistors with Lateral Gate for Linear and Efficient Millimeter-Wave Power Amplifiers

3. Improving the Linearity of GaN HEMTs by Optimizing Epitaxial Structure

4. DC and RF Characteristics of AlGaN/GaN/InGaN/GaN Double-Heterojunction HEMTs

5. Linearity Improvement With AlGaN Polarization- Graded Field Effect Transistors With Low Pressure Chemical Vapor Deposition Grown SiNx Passivation

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