Very Low Ohmic Contact Resistance through an AlGaN Etch-Stop in Nitrogen-Polar GaN-Based High Electron Mobility Transistors
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference9 articles.
1. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
2. AlGaN/GaN HEMTs-an overview of device operation and applications
3. Low nonalloyed Ohmic contact resistance to nitride high electron mobility transistors using N-face growth
4. N-polar GaN∕AlGaN∕GaN high electron mobility transistors
5. Growth kinetics of N-face polarity GaN by plasma-assisted molecular-beam epitaxy
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1. Polarity dependence in Cl2-based plasma etching of GaN, AlGaN and AlN;Applied Surface Science;2020-08
2. A Demonstration of Nitrogen Polar Gallium Nitride Current Aperture Vertical Electron Transistor;IEEE Electron Device Letters;2019-06
3. Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels;Applied Physics Letters;2018-02-12
4. Characterization of N-polar AlN in GaN/AlN/(Al,Ga)N heterostructures grown by metal-organic chemical vapor deposition;Semiconductor Science and Technology;2017-09-29
5. On a two-layer Si3N4/SiO2 dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs;Semiconductors;2016-08
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