Polarity dependence in Cl2-based plasma etching of GaN, AlGaN and AlN-Reference-Cited by-同舟云学术

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Polarity dependence in Cl2-based plasma etching of GaN, AlGaN and AlN

Published:2020-08 Issue: Volume:521 Page:146297
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Smith Matthew D.,Li Xu,Uren Michael J.,Thayne Iain G.,Kuball Martin

Funder

Engineering and Physical Sciences Research Council

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference50 articles.

1. Nitride Semiconductor Light-Emitting Diodes (LEDs);Huang,2018

2. A comprehensive review of recent progress on GaN high electron mobility transistors: devices fabrication and reliability;Zeng;Electronics,2018

3. Simulation of short-channel effects in N- and Ga-polar AlGaN/GaN HEMTs;Park;IEEE Trans. Electron Devices,2011

4. Electron transport in N-polar GaN-based heterostructures;Rakoski;Appl. Phys. Lett.,2019

5. N-polar InGaN-based LEDs fabricated on sapphire via pulsed sputtering;Ueno;APL Mater.,2017

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3. Fluorine-Based Low-Damage Selective Etching Process for E-Mode p-GaN/AlGaN/GaN HFET Fabrication;Electronics;2023-10-20

4. Selective area doping of GaN toward high-power applications;Journal of Physics D: Applied Physics;2023-06-13

5. Study of dry etched N-polar (Al)GaN surfaces obtained by inductively coupled plasma etching;Frontiers in Physics;2022-10-26

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