Optical properties of GaAs/GaP strained‐layer superlattices
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345588
Reference18 articles.
1. Optical properties of some III–V strained-layer superlattices
2. Optically tuned, all‐semiconductor optical interference filter
3. Effectiveness of strained‐layer superlattices in reducing defects in GaAs epilayers grown on silicon substrates
4. Light‐hole conduction in InGaAs/GaAs strained‐layer superlattices
5. Ga(As,P) strained-layer superlattices: A ternary semiconductor with independently adjustable band gap and lattice constant
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1. GaAs/GaP superlattice nanowires: growth, vibrational and optical properties;Nanoscale;2023
2. Band structure and absorption properties of (Ga, In)/(P, As, N) symmetric and asymmetric quantum wells and super-lattice structures: Towards lattice-matched III-V/Si tandem;Journal of Applied Physics;2018-09-07
3. Growth Mechanism and Electronic Structure of Zn3P2 on the Ga-Rich GaAs(001) Surface;The Journal of Physical Chemistry C;2014-06-04
4. Atomic structure and energy spectrum of Ga(As,P)/GaP heterostructures;Journal of Applied Physics;2012-10-15
5. Optical Properties of the Strained Layer Superlattices (GaAs)6/(GaP)m(001) (m=2, 4 and 6);Materials Science Forum;2009-01
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