Band structure and absorption properties of (Ga, In)/(P, As, N) symmetric and asymmetric quantum wells and super-lattice structures: Towards lattice-matched III-V/Si tandem-Reference-Cited by-同舟云学术

Band structure and absorption properties of (Ga, In)/(P, As, N) symmetric and asymmetric quantum wells and super-lattice structures: Towards lattice-matched III-V/Si tandem

Published:2018-09-07 Issue:9 Volume:124 Page:095104
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Kharel K.¹^ORCID,Freundlich A.¹

Affiliation:

1. Physics Department, University of Houston, Houston, Texas 77204-5004, USA

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5040858

Reference49 articles.

1. Integrating silicon photonics

2. Peculiarities of the photoluminescence of metastable Ga(N,As,P)/GaP quantum well structures

3. Dual junction GaInP/GaAs solar cells grown on metamorphic SiGe/Si substrates with high open circuit voltage

4. Characterization of Metamorphic GaAsP/Si Materials and Devices for Photovoltaic Applications

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