Optically tuned, all‐semiconductor optical interference filter
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.98712
Reference12 articles.
1. The use of metalorganic chemical vapor deposition to prepare device quality Ga(AsP) strained-layer superlattices
2. Single‐crystal, optical interference filters and integrated high reflector/photodiode using multilayers of GaP and GaAsxP1−x
3. Electronic structure of GaAsxP1−x/GaP strained‐layer superlattices with x<0.5
4. Growth and photoluminescence characterization of a GaAsxP1−x/GaP strained‐layer superlattice
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Optical Nonlinearities in Semiconductors Enhanced by Carrier Transport;Semiconductors and Semimetals;1998
2. Intensity-induced stopband bending in periodic nonlinear multilayers;IEEE Journal of Quantum Electronics;1994
3. Optically addressed asymmetric Fabry–Perot modulator;Applied Physics Letters;1991-12-09
4. Optical properties of GaAs/GaP strained‐layer superlattices;Journal of Applied Physics;1990-02-15
5. Ellipsometric study of GaAs/GaP superlattices;Applied Physics Letters;1990-01-22
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