Electronic structure of GaAsxP1−x/GaP strained‐layer superlattices with x<0.5-Reference-Cited by-同舟云学术

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Electronic structure of GaAsxP1−x/GaP strained‐layer superlattices with x<0.5

Published:1982-07 Issue:2 Volume:21 Page:469-472
ISSN:0022-5355
Container-title:Journal of Vacuum Science and Technology
language:en
Short-container-title:Journal of Vacuum Science and Technology

Author:

Osbourn G. C.

Publisher

American Vacuum Society

Subject

General Engineering

Link

http://avs.scitation.org/doi/pdf/10.1116/1.571681

Cited by 72 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electronic transport in strained p-modulation Be-doped Ga0.8In0.2As/GaAs single quantum well;Philosophical Magazine;2014-07-11

2. Molecular Beam Epitaxy, Semiconductors;Encyclopedia of Physical Science and Technology;2003

3. In x Ga 1_x As/GaAs interfaces: from2D islands to quantum dots;Il Nuovo Cimento D;1998-07

4. Lattice‐matching SiC substrates with GaN;Applied Physics Letters;1996-07-08

5. Preparation of Quantum Structures: Quantum Well Infrared Detectors;Fabrication, Properties and Applications of Low-Dimensional Semiconductors;1995

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