Lattice‐matching SiC substrates with GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.117940
Reference22 articles.
Cited by 50 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Investigation of the Temperature Impact on the Performance Characteristics of the Field-Plated Recessed Gate III-Nitride HEMT on β-Ga2O3 Substrate;Lecture Notes in Electrical Engineering;2023-09-03
2. Investigation of DC and RF Characteristics of Recessed Gate III-Nitride nano-HEMT on β-Ga2O3 Substrate with Back-Barrier for High-Power and High-Frequency Applications;2023-07-11
3. Analysis of Channel length, Gate length and Gate position Optimization of III-Nitride/β-Ga2O3 Nano-HEMT for High-Power Nanoelectronics and Terahertz Applications;Materials Science and Engineering: B;2023-07
4. Investigation of DC and RF characteristics of spacer layer thickness engineered recessed gate and field‐plated III‐nitride nano‐HEMT on β‐Ga2O3 substrate;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-06-07
5. Investigation of performance enhancement of a recessed gate field-plated AlGaN/AlN/GaN nano-HEMT on β-Ga2O3 substrate with variation of AlN spacer layer thickness;Journal of Materials Science: Materials in Electronics;2023-06
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