Investigation of the Temperature Impact on the Performance Characteristics of the Field-Plated Recessed Gate III-Nitride HEMT on β-Ga2O3 Substrate
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Publisher
Springer Nature Singapore
Link
https://link.springer.com/content/pdf/10.1007/978-981-99-4495-8_8
Reference37 articles.
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2. G.P. Rao, R. Singh, T.R. Lenka, N.E.I. Boukortt, H.P.T. Nguyen, Simulation modelling of III-Nitride/β-Ga2O3 Nano-HEMT for microwave and millimetre wave applications. Int. J. RF Microw. Comput. Eng. 1–13 (2022). https://doi.org/10.1002/mmce.23416
3. T.R. Lenka, A.K. Panda, AlGaN/GaN-based HEMT on SiC substrate for microwave characteristics using different passivation layers. Pramana J. Phys. 79(1), 151–163 (2012). https://doi.org/10.1007/s12043-012-0290-9
4. S. Saadaoui, O. Fathallah, H. Maaref, Effects of gate length on GaN HEMT performance at room temperature. J. Phys. Chem. Solids 161, 110418 (2022). https://doi.org/10.1016/j.jpcs.2021.110418
5. J. Manta, G.P. Rao, T.R. Lenka, M. Choudhury, H.P.T. Nguyen, III-Nitride HEMTs for THz applications, in Terahertz Devices, Circuits and Systems (Springer Nature, Singapore, 2022), pp. 149–166. https://doi.org/10.1007/978-981-19-4105-4_9
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