Growth Mechanism and Electronic Structure of Zn3P2 on the Ga-Rich GaAs(001) Surface-Reference-Cited by-同舟云学术

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Growth Mechanism and Electronic Structure of Zn3P2 on the Ga-Rich GaAs(001) Surface

Published:2014-06-04 Issue:24 Volume:118 Page:12717-12726
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Jeon Seokmin¹,Bosco Jeffrey P.¹,Wilson Samantha S.¹,Rozeveld Steve J.²,Kim Hyungjun³,Atwater Harry A.¹

Affiliation:

1. Thomas J. Watson Laboratories of Applied Physics, California Institute of Technology, MC 128-95, Pasadena, California 91125, United States

2. Analytical Sciences Laboratory, Dow Chemical Company, Midland, Michigan 48674, United States

3. Graduate School of EEWS, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Republic of Korea

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp4127804

Reference43 articles.

1. Photoluminescence-based measurements of the energy gap and diffusion length of Zn3P2

2. Absorption edge ofZn3P2

3. Polycrystalline Zn3P2Schottky barrier solar cells

4. Materials Availability Expands the Opportunity for Large-Scale Photovoltaics Deployment

5. Electrical and optical properties of vacuum-deposited amorphous Zn3P2 thin films

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nanoscale Growth Initiation as a Pathway to Improve the Earth-Abundant Absorber Zinc Phosphide;ACS Applied Energy Materials;2021-10-04

2. Rotated domains in selective area epitaxy grown Zn3P2: formation mechanism and functionality;Nanoscale;2021

3. Multiple morphologies and functionality of nanowires made from earth-abundant zinc phosphide;Nanoscale Horizons;2020

4. Thermodynamic re-assessment of the Zn–P binary system;Materialia;2019-06

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