GaAs/GaP superlattice nanowires: growth, vibrational and optical properties-Reference-Cited by-同舟云学术

GaAs/GaP superlattice nanowires: growth, vibrational and optical properties

Published:2023 Issue:3 Volume:15 Page:1145-1153
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Arif Omer¹^ORCID,Zannier Valentina¹^ORCID,Rossi Francesca²^ORCID,De Matteis Diego³,Kress Katharina³,De Luca Marta³⁴^ORCID,Zardo Ilaria³^ORCID,Sorba Lucia¹^ORCID

Affiliation:

1. NEST, Istituto Nanoscienze—CNR and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa, Italy

2. IMEM—CNR, Parco Area delle Scienze 37/A, I-43124 Parma, Italy

3. Physics Department, University of Basel, Klingelbergstrasse 82, CH-4056 Basel, Switzerland

4. Physics Department, Sapienza University of Rome, P.le Aldo Moro 2, 00185 Rome, Italy

Abstract

A HAADF-STEM image of a portion of a GaAs/GaP SL NW with 100 repetitions of 3 nm GaAs and 3 nm GaP alternating layers, and the corresponding μ-Raman (top) and μ-photoluminescence (bottom) spectra.

Funder

H2020 European Research Council

Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D2NR02350D

Reference51 articles.

1. III–V semiconductor nanowires for optoelectronic device applications

2. III–V Nanowires: Synthesis, Property Manipulations, and Device Applications